Strain Engineering of a Dual-Gate Structure for Highly Flexible and Transparent MoS2 Thin-Film Transistors with Graphene Electrodes
Author
Mingu Kang†, Jeoungmin Ji†, Seohak Park, Su-Bon Kim, Inseong Lee, Hyeongjin Lim, Cheolmin Park, Sejin Kim, Hamin Park, Woonggi Hong, Seunghyup Yoo*, and Sung-Yool Choi*