Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectri

This paper, “Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric" was published in Advanced Electronic Materials, and the image was selected as the Front Cover of 7/2020

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