Highly reliable synaptic cell array based on organic-inorganic hybrid bilayer stack toward precise offline learing
on the Front Cover of (2022) in Advanced Intelligent systems.
Flash-thermochemical engineering of phase and surface activity on metal oxides
on the Front Cover of (2022) in Chem.
Conductive-bridging random-access memories for emerging neuromorphic computing was featured on the Inside Front Cover of (27/2020) in Nanoscale.
Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric was featured on the Front Cover of (7/2020) in Advanced Electronic Materials.
Low-Thermal-Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron-Doped Reduced Graphene Oxide was featured on the Inside Back Cover of 2020 Advanced Science.
Prof. Sung-Yool Choi's Lab!
QMDL workshop, 2022 Summer
End of the session Party, 2022 Summer
QMDL workshop, 2022 Summer
Prof. Sung-Yool Choi has established the Quantum Materials & Devices Lab (QMDL), School of Electrical Engineering, KAIST, in November 2011. The research objective of QMDL is to understand the underlying principle in the conduction and switching behavior of the quantum materials for the development of noble electronic or optoelectronic devices. The research in QMDL is focused on the nano-scale materials and devices for the next-generation IT-ET-BT convergence technology, spanning the electronics and photonics applications of graphene, low-dimensional soft materials and devices, and the physics and applications of memristive devices.
Atomic-scale etching of hexagonal boron nitride for device integration based on two -dimensional materials was featured on the Back cover of 2018 Nanoscale.
Memristive Logic-in-Memory Integrated Circuits for Energy-Efficient Flexible Electronics was featured on the Front Cover of 2018 Advanced Functional Materials.
Laser-induced phase separation of silicon carbide was published, in 2016 Nature Commu
Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices was featured on the Back Cover of 2016
Advanced Functional Materials.
Low-Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric was featured on the Front Cover of 2017Advanced Functional Materials,
Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory was published in 2015 Advanced Functional Materials.
Selective protein transport through ultra-thin suspended reduced graphene oxide nanopores was featured on the Back Cover of 2017 Nanoscale.
Research on improved optical sintering efficiency by graphene layer was featured on the Back Cover of 2015 Small.
Tuning the catalytic functionality of transition metal dichalcogenides grown by chemical vapour deposition was featured on the Front Cover of 2017Journal of Materials Chemistry A.
Metal-Etching-Free Direct Delamination and Transfer of Single-Layer Graphene with a High Degree of Freedom was featured on the Front cover of 2015 Small
Research on the growth of monolayer of two-dimensional semiconductor (MoSe2) was published in ACS Nano!
Research on THz switching graphene devices was published in Nature Materials!